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| T R I Q U I N T S E M I C ON D U C TO R, I N C. TGA8300- SCC Gain Block Amplifier q q q q q q PHOTO ENLARGEMENT 2 to 18- GHz Fr equency Range 8300 20- dBm Typical Output Power at 1-dB Gain Compression 7.5- dB Typical Gain Input/Output SWR 1.5:1 On - Chip Blocking Capacitor Allows Easy Cascading 2,362 x 1,625 x 0,152 mm (0.093 x 0.064 x 0.006 in.) DESCRIPTION The TriQuint TGA8300 - SCC is a GaAs monolithic distributed amplifier designed for use as a multioctave general - purpose gain block. Four 189 - m gate width FETs provide 7.5 dB nominal gain and 5.5 - dB noise figur e from 2 to 18- GHz. Typical power output is 20 - dBm at 1- dB gain compression. Typical input and output SWRs ar e 1.5:1. Ground is provided to the circuitry through vias to the backside metallization. The TGA8300 - SCC is supplied in chip for m and is engineered for high - volume automated assembly . All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic wire- bonding processes. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA8300-SCC TYPICAL SMALL-SIGNAL POWER GAIN 10 8 + V+ = 6 V V+ = 6 V I + = 50% IIDSS I = 50% DSS T = 25C T AA =25 C Gain (dB) 6 4 2 0 2 6 10 14 18 Frequency (GHz) TYPICAL NOISE FIGURE 10 8 V+ = 6 V V+ = 6 V I ++ ==50% I DSS 50% I DSS TA = 25C A =25 C Noise Figure (dB) 6 4 2 0 2 6 10 14 18 Frequency (GHz) TYPICAL OUTPUT POWER 25 P1dB Output Power (dBm) 20 + = V += 66VV + = 50% I DSS I + = 50% I DSS T A =25 C TA = 25C 15 10 5 0 2 6 10 14 18 Frequency (GHz) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 2 TGA8300 -SCC TYPICAL RETURN LOSS 0 6 V+ = 6 V+ = 6 V V I I++ = 50% I DSS DSS T A A = 25C T =25 C Return Loss (dB) 12 18 24 30 Input Input Output Output 36 2 4 6 8 10 12 14 16 18 Frequency (GHz) ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V + .................................................................................................................... 8 V Negative supply voltage range, V - .............................................................................................. 0 V to - 5 V Power dissipation, PD at (or below) 25 C base-plate temperatur e* ...................................................... 1.8 W Operating channel temperature, TCH** ......................................................... ..................................... 150 C Mounting temperature (30 sec), TM .................................................................................................... 320 C Storage temperature range, TSTG ............................................................................................ - 65 to 150 C Ratings over operating channel temperature range, T CH (unless otherwise noted) Stresses beyond those listed under "Absolute Maximum Ratings" may cause per manent damage to the device. These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under "RF Characteristics " is not implied. Exposure to absolute maximum rated conditions for extended periods may af fect device reliability. * For operation above 25 C base-plate temperature, derate linearly at the rate of 3.8 mW/ C. **Operating channel temperatur e directly affects the device MTTF . For maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 3 TGA8300-SCC TYPICAL S -PARAMETERS Frequency (GHz) MAG S 11 ANG ( ) MAG S 21 ANG ( ) MAG S 12 ANG ( ) MAG S 22 ANG ( ) GAIN (dB) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.40 0.40 0.28 0.26 0.25 0.25 0.25 0.25 0.25 0.24 0.23 0.21 0.19 0.17 0.14 0.11 0.08 0.05 0.05 0.05 0.07 0.09 0.11 0.14 0.17 0.20 0.23 0.25 0.25 0.23 0.20 0.17 0.12 0.09 0.15 0.22 0.30 0.28 0.21 4 -151 180 167 158 151 143 137 132 127 122 116 112 106 101 97 95 105 130 148 146 134 117 97 76 58 42 27 15 6 -1 -3 2 32 60 59 44 21 -8 2.32 2.00 2.20 2.34 2.41 2.45 2.46 2.45 2.44 2.42 2.42 2.41 2.43 2.45 2.45 2.45 2.46 2.47 2.46 2.45 2.44 2.42 2.43 2.46 2.49 2.51 2.54 2.54 2.51 2.47 2.46 2.44 2.39 2.40 2.44 2.53 2.64 2.62 2.44 -146 167 155 137 121 105 89 74 60 46 32 19 5 -8 -22 -36 -50 -64 -78 -92 -106 -120 -134 -148 -162 -177 -168 -152 -136 -121 -105 -90 -74 -58 -42 -24 4 -19 -42 0.017 0.015 0.017 0.022 0.027 0.031 0.033 0.037 0.040 0.043 0.045 0.048 0.051 0.054 0.058 0.062 0.066 0.070 0.075 0.079 0.082 0.086 0.091 0.095 0.100 0.104 0.109 0.113 0.114 0.115 0.115 0.116 0.116 0.119 0.125 0.136 0.150 0.155 0.151 -163 97 91 75 59 40 25 12 -3 -17 -31 -45 -58 -72 -86 -100 -113 -126 -139 -152 -165 -177 171 159 147 135 121 106 91 77 61 46 -3 15 -0 -16 -36 -59 -80 0.52 0.32 0.20 0.20 0.20 0.18 0.15 0.11 0.08 0.06 0.06 0.06 0.06 0.06 0.04 0.03 0.03 0.05 0.07 0.08 0.10 0.11 0.13 0.14 0.14 0.13 0.12 0.10 0.09 0.10 0.13 0.17 0.21 0.23 0.23 0.19 0.12 0.11 0.19 -110 -172 109 56 27 10 -2 -10 -13 -11 -9 -10 -16 -30 -44 -81 -143 174 148 126 105 82 60 38 17 -4 -32 -66 -110 -158 165 134 116 98 80 66 65 100 107 7.3 6.0 6.8 7.4 7.6 7.8 7.8 7.8 7.7 7.7 7.7 7.6 7.7 7.8 7.8 7.8 7.8 7.8 7.8 7.8 7.7 7.7 7.7 7.8 7.9 8.0 8.1 8.1 8.0 7.9 7.8 7.7 7.6 7.6 7.7 8.1 8.4 8.4 7.7 V + = 6 V, I+ = 50% I DSS, TA = 25C Refer ence planes for S - parameter data include bond wires as specified in the "Recommended Assembly Diagram." TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 4 TGA8300-SCC RF CHARACTERISTICS GP SWR(in) SWR(out) P 1dB NF IP 3 PARAMETER TEST CONDITIONS TYP UNIT Small-signal power gain Input standing wave ratio Output standing wave ratio Output power at 1-dB gain compression Noise figure Output third-order intercept point f = 2 to 18 GHz f = 2 to 18 GHz f = 2 t 18 GHz o f= 2 to 18 GHz f = 2 to 18 GHz f = 8 GHz f= 12 GHz f =18 GHz 7.5 dB 1.5:1 1.4:1 20 dBm 5.5 dB 32 28 dBm 27 V + = 6 V, I+ = 50% I DSS, TA = 25C DC CHARACTERISTICS PARAMETER TEST CONDITIONS MIN MAX UNIT I DSS Total zero-gate-voltage drain current at saturation VDS = 0.5 V to 3.5 V, V GS = 0 130 300 mA TA = 25C VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autoprobe. THERMAL INFORMATION R JC PARAMETER TEST CONDITIONS NO M UNIT Thermal resistance, channel-to-backside V + = 6 V, I+ = 50% I DSS 45 C/W EQUIVALENT SCHEMATIC V+ RF Output FET 1 189 m FET 2 189 m FET 3 189 m FET 4 189 m RF Input V- RECOMMENDED TEST CONFIGURA TION RF Input DC Block DUT RF Output TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 5 TGA8300-SCC TYPICAL BIAS NETWORK V =6V Rd-Q CBypass 2 RF Input CBlock 1 TGA8300 4 V - = -1 V CBypass 3 RF Output + RECOMMENDED ASSEMBLY DIAGRAM V+ 0.01 F 25 RF Output RF Input 0.01 F V- RF connections: Bond using three 1- mil diameter, 20 to 30- mil-length gold bond wires at RF input and two 1 - mil diameter, 20 to 30 - mil- length gold bond wires at RF output for optimum RF per formance. Close placement of external components is essential to stability . TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 6 TGA8300-SCC MECHANICAL DRAWING 1,6256 (0.0640) 1,4199 (0.0559) 0,1702 (0.0067) 2,2073 (0.0869) 2 3 1,1227 (0.0442) 4 0,3073 (0.0121) 0,1803 (0.0071) 0 1 0,1524 0 (0.0060) 2,2047 (0.0868) 2,3622 (0.0930) Units: millimeters (inches) Thickness: 0,1524 (0.0060) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size tolerance: 0,0508 (0.0020) Bond Bond Bond Bond pad pad pad pad #1 #2 #3 #4 (RF Input): (V +): (RF Output): (V -): 0,1270 x 0,1016 (0.0050 x 0.0040) 0,1575 x 0,1245 (0.0062 x 0.0049) 0,1321 x 0,1016 (0.0052 x 0.0040) 0,0635 (0.0025) (radius) 7 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com |
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